Datasheet Details
| Part number | IRFBC40 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 92.75 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | IRFBC40_STMicroelectronics.pdf |
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Overview: ® IRFBC40 N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET TYPE IRFBC40 s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 6.2 A TYPICAL RDS(on) = 1.
| Part number | IRFBC40 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 92.75 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | IRFBC40_STMicroelectronics.pdf |
|
|
|
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and improves the performances compared with standard parts from various sources.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P t ot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRFBC40 | N-Channel Power MOSFET | Intersil Corporation |
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IRFBC40 | Power MOSFET | International Rectifier |
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IRFBC40 | N-Channel Power MOSFET | Fairchild Semiconductor |
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IRFBC40 | Power MOSFET | Vishay |
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IRFBC40 | N-Channel Power MOSFETs | Harris |
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