IRFBC40
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
Key Features
- 6.2A and 5.4A, 600V
- rDS(ON) = 1.2Ω and 1.6Ω
- Repetitive Avalanche Energy Rated
- Simple Drive Requirements
- Ease of Paralleling
- Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
