IRFBC40 Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching...
IRFBC40 Key Features
- 6.2A and 5.4A, 600V
- rDS(ON) = 1.2Ω and 1.6Ω
- Repetitive Avalanche Energy Rated
- Simple Drive Requirements
- Ease of Paralleling
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”