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IRFBC40 - N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Features

  • 6.2A and 5.4A, 600V.
  • rDS(ON) = 1.2Ω and 1.6Ω.
  • Repetitive Avalanche Energy Rated.
  • Simple Drive Requirements.
  • Ease of Paralleling.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFBC40 IRFBC42.

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Datasheet preview – IRFBC40

Datasheet Details

Part number IRFBC40
Manufacturer Harris
File Size 27.77 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRFBC40 Datasheet
Additional preview pages of the IRFBC40 datasheet.

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Full PDF Text Transcription

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Semiconductor IRFBC40, IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17426. January 1998 Features • 6.2A and 5.4A, 600V • rDS(ON) = 1.2Ω and 1.
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