IRFBC40LC Overview
This new series of low charge power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition reduced switching losses and improved efficiency are achievable in a variety of high frequency applications.
IRFBC40LC Key Features
- Ultra low gate charge
- Reduced gate drive requirement
- Enhanced 30 V, VGS rating
- Reduced Ciss, Coss, Crss
- Extremely high frequency operation
- Repetitive avalanche rated
- Material categorization: for definitions of pliance please see .vishay./doc?99912
- This datasheet provides information about parts that are
