ISB35832 Overview
The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equivalent usable gates. The array operates over a Vdd voltage range of 2.7 to 3.6 volts.
ISB35832 Key Features
- input NAND delay of 0.210 ns (typ) with fanout = 2. Broad I/O functionality including LVCMOS, LVTTL, GTL, PECL, and LVDS