Datasheet4U Logo Datasheet4U.com

L100NHS3LL - N-channel Power MOSFET

General Description

leThis product utilizes the latest advanced design orules of ST’s proprietary STripFET™ technology sand a proprietary process for integrating a bmonolithic Schottky diode.

Key Features

  • STL100NHS3LL N-channel 30V - 0.0032Ω - 22A - PowerFLAT™ (6x5) STripFET™ Power MOSFET plus monolithic Schottky Preliminary Data Type STL100NHS3LL VDSS 30V RDS(on) < 0.0042Ω ID 22A(1) 1. This value is rated according to Rthj-pcb.
  • Optimal RDS(on) x Qg trade-off @ 4.5V.
  • Reduced switching losses.
  • Reduced conduction losses t(s).
  • Improved junction-case thermal resistance uc.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features STL100NHS3LL N-channel 30V - 0.0032Ω - 22A - PowerFLAT™ (6x5) STripFET™ Power MOSFET plus monolithic Schottky Preliminary Data Type STL100NHS3LL VDSS 30V RDS(on) < 0.0042Ω ID 22A(1) 1. This value is rated according to Rthj-pcb ■ Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses ■ Reduced conduction losses t(s)■ Improved junction-case thermal resistance ucApplication rod■ Switching applications te PDescription leThis product utilizes the latest advanced design orules of ST’s proprietary STripFET™ technology sand a proprietary process for integrating a bmonolithic Schottky diode. The new Power OMOSFET is optimized for the most important ) -demanding synchronous switch function in DCt(sDC converter for Computer and Telecom. PowerFLAT™(6x5) Figure 1.