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L55NH3LL - N-channel Power MOSFET

Description

t(s) oleThis application specific Power MOSFET is the slatest generation of STMicroelectronics unique c b“STripFET™” technology.

The resulting transistor u Ois optimized for low on-resistance and minimal rod -gate charge.

Features

  • Type VDSS RDS(on) max ID STL55NH3LL 30 V < 0.0088 Ω 15 A t(s).
  • Improved die-to-footprint ratio c.
  • Very low profile package (1mm max) du.
  • Very low thermal resistance ro ).
  • Very low gate charge P t(s.
  • Low threshold device lete duc.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL55NH3LL N-channel 30 V, 0.0079 Ω, 15 A, PowerFLAT™ (6x5) ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STL55NH3LL 30 V < 0.0088 Ω 15 A t(s)■ Improved die-to-footprint ratio c■ Very low profile package (1mm max) du■ Very low thermal resistance ro )■ Very low gate charge P t(s■ Low threshold device lete ducApplication so ro■ Switching applications - Ob te PDescription t(s) oleThis application specific Power MOSFET is the slatest generation of STMicroelectronics unique c b“STripFET™” technology. The resulting transistor u Ois optimized for low on-resistance and minimal rod -gate charge. The chip-scaled PowerFLAT™ P t(s)package allows a significant board space saving, still boosting the performance. PowerFLAT™(6x5) Figure 1.
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