STMicroelectronics L55NH3LL
N-channel Power MOSFET
FEATURES
Type VDSS RDS(on) max ID STL55NH3LL 30 V < 0.0088 Ω 15 A t(s)● Improved die-to-footprint ratio c● Very low profile package (1mm max) du● Very low thermal resistance ro )● Very low gate charge P t(s● Low threshold device lete ducApplication so ro● Switching applications - Ob te PDescription t(s) oleThis application specific Power MOSFET is the slatest generation of STMicroelectronics unique c b“STripFET™” technology. The resulting transistor u Ois optimized for low on-resistance and minimal rod -gate charge. The chip-scaled PowerFLAT™ P t(s)package allows a significant board space saving, still boosting the performance. PowerFLAT™(6x5) Figure 1. Internal schematic diagram Obsolleettee ProducTable 1. Device summary soOrder code Ob STL55NH3LL Marking L55NH3LL Package PowerFLAT™ (6x5) Packaging Tape and reel May 2008 Rev 3 1/14