L6392 Description
The L6392 is a high-voltage device, manufactured with the BCD “OFF-LINE" technology. It has a monolitich half-bridge gate driver for N-channel Power MOSFET or IGBT. The high side (floating) section is designed to stand a voltage rail up to 600.
L6392 Key Features
- 270 mA source
- 430 mA sink Switching times 75/35 nsec rise/fall with 1 nF load 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bo
- Description