STMicroelectronics LET20030C
The LET20030C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity.| Part No. | LET20030C |
|---|---|
| Datasheet | LET20030C Download |
| Manufacturer |  STMicroelectronics |
| Description | RF Power Transistor |
| Buy | Stock & Price |
FEATURES
● Excellent thermal stability● Common source configuration
● POUT (@28 V) = 45 W with 13.9 dB gain @ 2000 MHz
● POUT (@36 V) = 53 W with 13.3 dB gain @ 2000 MHz
● BeO free package
● In compliance with the 2002/95/EC European directive M243 epoxy sealed
DESCRIPTION
Figure 1. Pin out 1. Drain 2. Gate 1 3 2 3. Source Table 1. Device summary Order code LET20030C Package M243 Branding LET20030C July 2011 Doc ID 019038 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/9 9 Maximum ratings 1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol Parameter V(BR)DSS VGS ID PDISS TJ TSTG Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 °C) Max. operating junction temperature Storage temperature Table 3. Thermal data Symbol Parameter Rth(JC) Junction-case thermal resistance LET20030C Value Unit 80 V -0.5 to +15 V 9 A 108 W 200 °C -65 to +150 °C Value 1.2 Unit °C/W 2/9 Doc ID 019038 Rev 1 LET20030C 2 Electrical characteristics TC = 25 °C Table 4.
