| Part number | LET20030C |
|---|---|
| Datasheet | LET20030C_STMicroelectronics.pdf |
| File Size | 37.44 KB |
| Manufacturer | STMicroelectronics |
| Description | RF POWER TRANSISTORS Ldmos Enhanced Technology |
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The LET20030C is a mon source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in mon source mode at 26 V. It is ideal for base station applications requiring high linearity.
See all STMicroelectronics datasheets
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