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LET21004 Datasheet PDF

STMicroelectronics LET21004

The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz.
Part No. LET21004
Datasheet LET21004 Download
Manufacturer
STMicroelectronics
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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LET21004 datasheet page 1 preview

DESCRIPTION

LET21004 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. LET21004’s superior linearity performance makes it an ideal solution for base station applications. ORDER CODE LET21004 BRANDING 21004 PIN CONNECTION TOP VIEW

ABSOLUTE MAXIMUM RATINGS

(TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 TBD 150 -65 to +150 Unit V V A W °C °C THERMAL DATA (TCASE = 70 °C) Rth(j-c) Junction -Case Thermal Resistance TBD °C/W April, 15 2003 1/4 LET21004 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 0.3 A ID = 0.3 A VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 TBD TBD TBD TBD TBD Min.
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