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LET21008 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

General Description

The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 26 V in common source mode at frequencies up to 2.1 GHz.

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Datasheet Details

Part number LET21008
Manufacturer STMicroelectronics
File Size 40.84 KB
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Datasheet download datasheet LET21008 Datasheet

Full PDF Text Transcription for LET21008 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LET21008. For precise diagrams, and layout, please refer to the original PDF.

LET21008 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY ...

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GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 11 dB gain @ 2170 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION PowerFLAT™(5x5) ORDER CODE LET21008 BRANDING 21008 DESCRIPTION The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovativ

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