| Part number | LET9002 |
|---|---|
| Datasheet | LET9002_STMicroelectronics.pdf |
| File Size | 40.75 KB |
| Manufacturer | STMicroelectronics |
| Description | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
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The LET9002 is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in mon source mode at 26 V. LET9002 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless...
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