LET9002 Datasheet PDF | STMicroelectronics

STMicroelectronics LET9002

The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source mode at 26 V. It is ideal for digital cellular BTS applications requiring high linearity.

Part No.	LET9002
Datasheet	LET9002 Download
Manufacturer	STMicroelectronics
Description	RF Power Transistor
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DESCRIPTION

LET9002 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. PIN CONNECTION TOP VIEW

ABSOLUTE MAXIMUM RATINGS

(TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 0.25 4 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 20 °C/W April, 15 2003 1/4 LET9002 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 125 mA ID = 200 mA VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz -TBD TBD TBD 2.0 Min. 65 1 1 5.0 0.9 Typ. Max. Unit V µA µA V V mho pF pF pF DYNAMIC (f = 960 MHz) Symbol Pout(1) ηD(1) Load mismatch VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD POUT = 2 W POUT = 2 W Test Conditions Min.