| Part number | LET9006 |
|---|---|
| Datasheet | LET9006_STMicroelectronics.pdf |
| File Size | 40.56 KB |
| Manufacturer | STMicroelectronics |
| Description | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
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The LET9006 is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 26 V in mon source mode at frequencies up to 1 GHz.
See all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| LET9002 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET9045S | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET9060 | RF power transistor |
| LET9060C | RF Power Transistor |
| LET9060S | RF power transistor |
| LET9085 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET9130 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET16045C | RF power transistor |
| LET19060C | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET20015 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
