Download LET9006 Datasheet PDF
LET9006 page 2
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LET9006 page 3
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LET9006 Description

The LET9006 is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 26 V in mon source mode at frequencies up to 1 GHz.