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LET9006 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

General Description

The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 26 V in common source mode at frequencies up to 1 GHz.

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Datasheet Details

Part number LET9006
Manufacturer STMicroelectronics
File Size 40.56 KB
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Datasheet download datasheet LET9006 Datasheet

Full PDF Text Transcription for LET9006 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LET9006. For precise diagrams, and layout, please refer to the original PDF.

LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SO...

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NCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 17 dB gain @ 960 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS PowerFLAT™(5x5) ORDER CODE LET9006 BRANDING 9006 DESCRIPTION The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology moun

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