DESCRIPTION
LET9006 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is ideal for digital cellular BTS applications requiring high linearity. PIN CONNECTION TOP VIEW ABSOLUTE MAXIMUM RATINGS
(TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 16 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 5 °C/W April, 15 2003 1/4 LET9006 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions ID = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 0.5 A ID = 800 mA VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz TBD TBD TBD TBD 2.0 Min.
STMicroelectronics
