STMicroelectronics LET9120M
The LET9120M is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.FEATURES
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● Excellent thermal stability Common source configuration push-pull POUT = 120 W with 18 dB gain @ 860 MHz Internal input matching BeO-free package
DESCRIPTION
M252 Epoxy sealed Figure 1. Pin connection 1 2 3 5 4 1. Drain 2. Drain 3. Source 4. Gate 5. Gate Table 1. Device summary Order code LET9120M Package M252 Branding LET9120M November 2009 Doc ID 16762 Rev 1 1/8 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents LET9120M Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .