LET9120 Description
The LET9120 is a mon source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1.6 GHz. M246 Epoxy sealed Figure 1. Pin connection 12 1-2 Drain 4-5 Gate 5 4 3 Source Table.
LET9120 Key Features
- Excellent thermal stability
- mon source configuration push-pull
- POUT = 120 W with 18 dB gain @ 860 MHz
- BeO-free package