Datasheet4U Logo Datasheet4U.com

LET9045 - RF power transistor

General Description

The LET9045 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applicatios.

It operates at 28 V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
LET9045C RF power transistor
LET9120 RF power transistor
LET9120M RF power transistor
LET9150 RF power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com LET9045 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The LET9045 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applicatios. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.