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LET9045C - RF power transistor

General Description

The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The LET9045C is designed for high gain and broadband performance operating in common source mode at 28 V.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT (@28 V) = 45 W with 18.5 dB gain @ 960 MHz.
  • POUT (@36V) = 70 W with 18.5 dB gain @ 960 MHz.
  • BeO free package.
  • In compliance with the 2002/95/EC European directive.

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📁 Similar Datasheet

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LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT (@28 V) = 45 W with 18.5 dB gain @ 960 MHz ■ POUT (@36V) = 70 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC European directive Description The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. M243 epoxy sealed Figure 1. Pin out 1. Drain 2. Gate 1 3 2 3. Source Table 1.