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M28256 - 256 Kbit 32Kb x8 Parallel EEPROM

General Description

The M28256 and M28256-Ware 32K x8 low power Parallel EEPROM fabricatedwith STMicroelectronics proprietary double polysilicon CMOS technology.

Table 1.

Key Features

  • ction WRITE AAh in Address 5555h WRITE.

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M28010 1-Mbit 128K x 8 Parallel EEPROM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M28256 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection PRELIMINARY DATA FAST ACCESS TIME: – 90ns at 5V – 120ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28256 – 2.7V to 3.6V for M28256-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle ENHANCED END of WRITE DETECTION: – Data Polling – Toggle Bit STATUS REGISTER HIGH RELIABILITY DOUBLE POLYSILICON, CMOS TECHNOLOGY: – Endurance >100,000 Erase/Write Cycles – Data Retention >10 Years JEDEC APPROVED BYTEWIDE PIN OUT ADDRESS and DATA LATCHED ON-CHIP SOFTWARE DATA PROTECTION 28 1 PDIP28 (BS) PLCC32 (KA) 28 1 SO28 (MS) 300 mils TSOP28 (NS) 8 x13.4mm Figure 1.