M28256 Datasheet | STMicroelectronics

256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection PRELIMINARY DATA FAST ACCESS TIME: - 90ns at 5V - 120ns at 3V SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28256 - 2.7V to 3.6V for M28256-xx W LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle ENHANCED END of WRITE DETECTION: - Data Polling - Toggle Bit STATUS REGISTER HIGH RELIABILITY DOUBLE POLYSILICON, CMOS TECHNOLOGY: - Endurance >100,000 Erase/Write Cycles - Data Retention >10 Years JEDEC APPROVED BYTEWIDE PIN OUT ADDRESS and DATA LATCHED ON-CHIP SOFTWARE DATA PROTECTION PDIP28 (BS) PLCC32 (KA) SO28 (MS) 300 mils TSOP28 (NS) 8 x13.4mm Figure 1. Logic Diagram DESCRIPTION The M28256 and M28256-Ware 32K x8 low power Parallel EEPROM fabricatedwith STMicroelectronics proprietary double polysilicon CMOS technology. Table 1. Signal Names A0-A14 DQ0-DQ7 W E G VCC VSS Address Input Data Input / Output Write Enable Chip Enable Output Enable Supply Voltage Ground 15 A0-A14 8 DQ0-DQ7 AI01885 January 1999 This is preliminary information on a new product now in developmentor undergoing evaluation . Detail s are subject to change without notice. 1/21 Figure 2A. DIP Pin Connections Figure 2B. LCC Pin Connections AI01886 AI01887 Warning: NC = Not Connected, DU = Don’t Use. Figure 2C. SO Pin...