M28C16A Datasheet | STMicroelectronics

M28C16A M28C17A 16 Kbit (2Kb x8) Parallel EEPROM FAST ACCESS TIME: - 150ns at 5V - 250ns at 3V SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C16A and M28C17A - 2.7V to 3.6V for M28C16-xx W LOW POWER CONSUMPTION FAST WRITE CYCLE - 32 Bytes Page Write Operation - Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION - Ready/Busy Open Drain Output - Data Polling - Toggle Bit PAGE LOAD TIMER STATUS BIT HIGH RELIABILITY SINGLE POLYSILICON, CMOS TECHNOLOGY - Endurance >100,000 Erase/Write Cycles - Data Retention >40 Years JEDEC APPROVED BYTEWIDE PIN OUT PDIP28 (BS) PLCC32 (KA) SO28 (MS) 300 mils TSOP28 (NS) 8 x13.4mm Figure 1. Logic Diagram DESCRIPTION The M28C16A and M28C17Aare 2K x8 low power Parallel EEPROM fabricatedwith STMicroelectronics proprietarysingle polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V or 3V power supply. 11 A0-A10 8 DQ0-DQ7 Table 1. Signal Names A0-A10 Addre...