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M28C17A - 16 Kbit (2K x 8) Parallel EEPROM

Download the M28C17A datasheet PDF. This datasheet also covers the M28C16A variant, as both devices belong to the same 16 kbit (2k x 8) parallel eeprom family and are provided as variant models within a single manufacturer datasheet.

General Description

The M28C16A and M28C17Aare 2K x8 low power Parallel EEPROM fabricatedwith STMicroelectronics proprietarysingle polysilicon CMOS technology.

The device offers fast access time with low power dissipation and requires a 5V or 3V power supply.

Table 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M28C16A-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
M28C17 16 Kbit (2K x 8) Parallel EEPROM
M28C17B 16 Kbit (2K x 8) Parallel EEPROM
M28C16 16K (2K x 8) PARALLEL EEPROM
M28C16A 16 Kbit (2K x 8) Parallel EEPROM
M28C16B 16 Kbit (2K x 8) Parallel EEPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M28C16A M28C17A 16 Kbit (2Kb x8) Parallel EEPROM FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C17A – 2.7V to 3.6V for M28C16-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output – Data Polling – Toggle Bit PAGE LOAD TIMER STATUS BIT HIGH RELIABILITY SINGLE POLYSILICON, CMOS TECHNOLOGY – Endurance >100,000 Erase/Write Cycles – Data Retention >40 Years JEDEC APPROVED BYTEWIDE PIN OUT 28 1 PDIP28 (BS) PLCC32 (KA) 28 1 SO28 (MS) 300 mils TSOP28 (NS) 8 x13.4mm Figure 1.