M29DW324DB Overview
M29DW324DT M29DW324DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA.
M29DW324DB Key Features
- VCC = 2.7V to 3.6V for Program, Erase and Read
- VPP =12V for Fast Program (optional) s ACCESS TIME: 70, 90ns s PROGRAMMING TIME
- 10µs per Byte/Word typical
- Double Word/ Quadruple Byte Program s MEMORY BLOCKS
- Dual Bank Memory Array: 16+16 Mbit
- Parameter Blocks (Top or Bottom Location) s DUAL OPERATIONS
- Read and Program another Block during Erase Suspend
- Faster Production/Batch Programming
- 64 bit Security Code
- Extra block used as security block or to store additional information