M36D0R6040B0 Overview
Key Features
- Flash Memory – 1 die of 16 Mbit (1Mb x
- SUPPLY VOLTAGE – VDDF = VDDP = 1.7V to 1.95V
- LOW POWER CONSUMPTION
- PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY
- PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options
- MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top location)
- ASYNCHRONOUS READ – Asynchronous Page Read mode – Random Access: 70ns
- DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations
- BLOCK LOCKING – All blocks locked at Power-up – Any combination of blocks can be locked – WPF for Block Lock-Down
- Package FBGA Stacked TFBGA67 (ZAI) 12 x 8mm SECURITY – 128-bit user programmable OTP cells – 64-bit unique device number
