M36L0R7040B0 Overview
Key Features
- SUPPLY VOLTAGE – VDDF = VDDP = VDDQ = 1.7 to 1.95V – VPP = 9V for fast program (12V tolerant)
- PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY
- SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns
- SYNCHRONOUS BURST READ SUSPEND
- PROGRAMMING TIME – 10µs typical Word program time using Buffer Program
- MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location)
- DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operations
- SECURITY – 64 bit unique device number – 2112 bit user programmable OTP Cells
- COMMON FLASH INTERFACE (CFI)
- 100,000 PROGRAM/ERASE CYCLES per BLOCK PSRAM
