STMicroelectronics M36W0R5020B0
32 Mbit Flash Memory and 4 Mbit SRAM
FEATURES
SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM● SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V
● LOW POWER CONSUMPTION
● ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configuration): 8814h – Device Code (Bottom Flash Configuration): 8815h
● PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY
● PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options
● MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location)
● SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 66MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70ns
● DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations
● Figure 1. Package FBGA Stacked TFBGA88 (ZAQ) BLOCK LOCKING – All blocks locked a...