STMicroelectronics M36W0R6030B0
64-Mbit Flash Memory and 8-Mbit SRAM
| Part No. | M36W0R6030B0 |
|---|---|
| Datasheet | M36W0R6030B0 Download |
| Manufacturer |  STMicroelectronics |
| Description | 64-Mbit Flash Memory and 8-Mbit SRAM |
| Buy | Stock & Price |
FEATURES
SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 8 Mbit SRAM● SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V
● LOW POWER CONSUMPTION
● ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configuration): 8810h – Device Code (Bottom Flash Configuration): 8811h
● PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY
● PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options
● MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location)
● SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 66MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70ns
● DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations
● Figure 1. Package FBGA Stacked TFBGA88 (ZAQ) BLOCK LOCKING – All blocks locked at Power-up –...
