M36W216BI
FEATURES
SUMMARY s MULTIPLE MEMORY PRODUCT
- 16 Mbit (1Mb x 16) Boot Block Flash Memory
- 2 Mbit (128Kb x 16) SRAM s SUPPLY VOLTAGE
- VDDF = VDDS = 2.7V to 3.3V
- VDDQF = VDDS = 2.7V to 3.3V
- VPPF = 12V for Fast Program (optional) s ACCESS TIME: 70ns, 85ns s LOW POWER CONSUMPTION s ELECTRONIC SIGNATURE
- Manufacturer Code: 20h
- Top Device Code, M36W216TI: 88CEh
- Bottom Device Code, M36W216BI: 88CFh
FLASH MEMORY s MEMORY BLOCKS
- Parameter Blocks (Top or Bottom location)
- Main Blocks s PROGRAMMING TIME
- 10µs typical
- Double Word Programming Option s BLOCK LOCKING
- All blocks locked at Power up
- Any bination of blocks can be locked
- WPF for Block Lock-Down s AUTOMATIC STAND-BY MODE s PROGRAM and ERASE SUSPEND s 100,000 PROGRAM/ERASE CYCLES per BLOCK s MON FLASH INTERFACE
- 64 bit Security Code s SECURITY
- 64 bit user programmable OTP cells
- 64 bit unique device identifier
- One parameter block permanently lockable
SRAM s 2 Mbit (128K x 16 bit) s ACCESS TIME: 70ns s LOW VDDS...
