FEATURES
SUMMARY s MULTIPLE MEMORY PRODUCT – 16 Mbit (1Mb x 16) Boot Block Flash Memory – 2 Mbit (128Kb x 16) SRAM s SUPPLY VOLTAGE – VDDF = VDDS = 2.7V to 3.3V – VDDQF = VDDS = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional) s ACCESS TIME: 70ns, 85ns s LOW POWER CONSUMPTION s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M36W216TI: 88CEh – Bottom Device Code, M36W216BI: 88CFh FLASH MEMORY s MEMORY BLOCKS – Parameter Blocks (Top or Bottom location) – Main Blocks s PROGRAMMING TIME – 10µs typical – Double Word Programming Option s BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WPF for Block Lock-Down s AUTOMATIC STAND-BY MODE s PROGRAM and ERASE SUSPEND s 100,000 PROGRAM/ERASE CYCLES per BLOCK s COMMON FLASH INTERFACE – 64 bit Security Code s SECURITY – 64 bit user programmable OTP cells – 64 bit unique device identifier – One parameter block permanently lockable SRAM s 2 Mbit (128K x 16 bit) s ACCESS TIME: 70ns s LOW VDDS DATA RETENTION: 1.5V s POWER DOWN FEATURES
USING TWO CHIP ENABLE INPUTS Figure 1.
STMicroelectronics
