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MD1803DFP - High voltage NPN Power transistor

General Description

The MD1803DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure.

The new MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage.

RBE=60Ω typ.

Key Features

  • State-of-the-art technology:.
  • Diffused collector “enhanced generation” Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully insulated power package UL compliant Integrated free wheeling diode TO-220FP 1 3 2.

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MD1803DFP www.datasheet4u.com High voltage NPN Power transistor for standard definition CRT display Features ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “enhanced generation” Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully insulated power package UL compliant Integrated free wheeling diode TO-220FP 1 3 2 Applications ■ Horizontal deflection output for TV Figure 1. Internal schematic diagram Description The MD1803DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage. RBE=60Ω typ. Table 1.