Datasheet Details
| Part number | MD1803DFP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.92 KB |
| Description | NPN Transistor |
| Datasheet | MD1803DFP-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MD1803DFP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.92 KB |
| Description | NPN Transistor |
| Datasheet | MD1803DFP-INCHANGE.pdf |
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· Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current- Continuous 10 A ICM Collector peak current (tp<5ms) 15 A IB Base Current- Continuous 5 A PTOT Total dissipation at TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W MD1803DFP isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Eollector-base breakdown Voltage IC= 700mA;
IC= 0 VCE(sat)(1) Collector-Emitter Saturation Voltage IC= 5.0A;
IB=1.25A VBE(sat)(1) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 5.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MD1803DFP | High voltage NPN Power transistor | STMicroelectronics |
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MD1803DFH | High voltage NPN Power transistor | ST Microelectronics |
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MD1803DFX | High voltage NPN Power transistor | ST Microelectronics |
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MD1803DFX | Silicon NPN Power Transistor | Inchange Semiconductor |
| Part Number | Description |
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