MD1803DFP datasheet by Inchange Semiconductor.
| Part number | MD1803DFP |
|---|---|
| Datasheet | MD1803DFP-INCHANGE.pdf |
| File Size | 210.92 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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· Low base-drive requirements · Collector-Emitter Sustaining Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Eollector-base breakdown Voltage IC= 700mA; IC= 0 VCE(sat)(1) Collector-Emitter Saturation Voltage IC= 5.0A;.
View MD1803DFP datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MD1803DFP | High voltage NPN Power transistor | STMicroelectronics |
 |
MD1803DFH | High voltage NPN Power transistor | ST Microelectronics |
|
MD1803DFX | High voltage NPN Power transistor | ST Microelectronics |
 |
MD1803DFX | Silicon NPN Power Transistor | Inchange Semiconductor |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|
