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MD1803DFX - Silicon NPN Power Transistor

General Description

High Voltage Low base-drive requirements Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY

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isc Silicon NPN Power Transistor DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current- Continuous 10 A ICM Collector peak current (tp<5ms) 15 A IB Base Current- Continuous 5 A PTOT Total dissipation at TC=25℃ 57 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Ca