Datasheet Details
| Part number | MD1803DFX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.71 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MD1803DFX-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MD1803DFX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.71 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MD1803DFX-InchangeSemiconductor.pdf |
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· High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current- Continuous 10 A ICM Collector peak current (tp<5ms) 15 A IB Base Current- Continuous 5 A PTOT Total dissipation at TC=25℃ 57 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.2 UNIT ℃/W MD1803DFX isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Eollector-base breakdown Voltage IC= 200mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;
IB=1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MD1803DFX | High voltage NPN Power transistor | ST Microelectronics |
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MD1803DFH | High voltage NPN Power transistor | ST Microelectronics |
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MD1803DFP | High voltage NPN Power transistor | STMicroelectronics |
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MD1803DFP | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| MD1802FX | Silicon NPN Power Transistor |