STMicroelectronics MJD45H11
Low voltage complementary power transistor
FEATURES
TAB 23 1 DPAK C (2, TAB) C (2, TAB)● Low collector-emitter saturation voltage
● Fast switching speed Application
● General purpose switching and amplifier
DESCRIPTION
B (1) B (1) These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications. E (3) SC06960 E (3) SC08810 Product status links MJD44H11T4 MJD45H11T4 Product summary Order code MJD44H11T4 Marking MJD44H11 Polarity NPN Package DPAK Packing Tape and reel Order code MJD45H11T4 Marking MJD45H11 Polarity PNP Package DPAK Packing Tape and reel DS1232 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office. 1 Note: MJD44H11T4, MJD45H11T4 Electrical ratings Electrical ratings Symbol VCEO VEBO IC ICM PTOT Tstg TJ Table 1. Absolute maximum ratings Parameter Collector-emitter voltage (IB = 0 A) Collector-base voltage (IC = 0 A) Collector current Collector peak current Total power dissipation at TC = 25°C Storage temperature range Maximum operating junction temperature For PNP types voltage and current values are negative.