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MJD47 Datasheet PDF

STMicroelectronics MJD47

The MJD47 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor.
Part No. MJD47
Datasheet MJD47 Download
Manufacturer
STMicroelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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MJD47 datasheet page 1 preview

APPLICATIONS

s SWITCH MODE POWER SUPPLIES s AUDIO AMPLIFIERS s GENERAL PURPOSE SWITCHING AND AMPLIFIER

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitt er-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction T emperature Value 350 250 5 1 2 0.6 1.2 15 -65 to 150 150 Uni t V V V A A A A W o o C C January 2000 1/6 MJD47 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100 o o C/W C/W

ELECTRICAL CHARACTERISTICS

(Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 350 V V CE = 150 V V EB = 5 V I C = 30 mA 250 Min.
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