STMicroelectronics MJE13009
The MJE13009 is a high voltage Multiepitaxial Mesa NPN transistor mounted in Jedec TO-220 plastic package. It uses a Hollow Emitter structure to enhance switching speeds.| Part No. | MJE13009 |
|---|---|
| Datasheet | MJE13009 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
s ELECTRONIC TRANSFORMER FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIESDESCRIPTION
3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VCEO VCEV VEBO IC ICM IB IBM IE IEM Ptot Tstg Tj Parameter Collector-Emitter Voltage (IB = 0) Collector-Emitter Voltage (VBE = -1.5 V) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp ≤ 10 ms) Base Current Base Peak Current (tp ≤ 10 ms) Emitter Current Emitter Peak Current Total Power Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature November 2002 Value 400 700 9 12 25 6 12 18 36 110 -65 to 150 150 Unit V V V A A A A A A W oC oC 1/6 MJE13009 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.14 oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEV Collector Cut-off VCE = 700 V Current (VEB = -1.5 V) VCE = 700 V Tcase = 100oC IEBO Emitter Cut-off Current (IC = 0) VCEO(sus)∗ Collector-Emitter Sus...
