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MJE13009 - NPN Silicon Power Transistors

General Description

These devices are designed for high voltage, high

speed power switching inductive circuits where fall time is critical.

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Datasheet Details

Part number MJE13009
Manufacturer TGS
File Size 88.77 KB
Description NPN Silicon Power Transistors
Datasheet download datasheet MJE13009 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIGER ELECTRONIC CO.,LTD Product specification SWITCHMODE Series NPN Silicon Power Transistors MJE13009 DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE such as Switching Regulator’s, Inverters, Motor Controls,applications Solenoid/Relay drivers and Deflection circuits. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature l VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 700 400 9 12.0 6.