STMicroelectronics MMBT2222A
SMALL SIGNAL NPN TRANSISTOR
APPLICATIONS
WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Emitter Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value 75 40 6 0.6 0.8 350 -65 to 150 150 Unit V V V A A mW o o C C February 2003 1/5 MMBT2222A THERMAL DATA R thj-amb● Thermal Resistance Junction-Ambient 2 Max 357.1 o C/W
● Device mounted on a PCB area of 1 cm .
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX I CBO I EBO Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 60 V V CE = 60 V V CB = 75 V V CB = 75 V V EB = 3 V I C = 10 mA 40 Min.