The MSC81111 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system.
This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.
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MSC81111
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz
.250 2LFL (S010) hermetically sealed ORDER CODE MSC81111 BRANDING 81111
PIN CONNECTION
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DESCRIPTION The MSC81111 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC81111 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.
MSC81111 Datasheet
