MSC81111
MSC81111 is RF & MICROWAVE TRANSISTORS manufactured by STMicroelectronics.
DESCRIPTION
The MSC81111 is a mon base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC81111 is designed for Class C amplifier applications in the 0.4
- 1.2 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation- Device Current-
(TC ≤ 50°C)
18.75 600 35 200
- 65 to +200
W m A V °C °C
Collector-Supply Voltage- Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 8.0 °C/W
- Applies only to rated RF amplifier operation
October 1992
1/5
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO h FE DYNAMIC
Symbol
IC = 1m A IE = 1m A IC = 5m A VCB = 28V VCE = 5V
IE = 0m A IC = 0m A RBE = 10Ω IC = 200m A
45 3.5 45
- 15
- -
- -
- -
- - 1.0 120
V V V m A
- Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc GP COB f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1 MHz
PIN = 0.5 W PIN = 0.5 W PIN = 0.5 W VCB = 28 V
VCC = 28 V VCC = 28 V VCC = 28 V
5.0 50 10
- 6.6 52...
