MSC82306 - RF & MICROWAVE TRANSISTORS

Product Overview

STMicroelectronics

Part number	MSC82306
Manufacturer	STMicroelectronics
File Size	80.95 KB
Description	RF & MICROWAVE TRANSISTORS
Datasheet	MSC82306 Datasheet
Additional preview pages of the MSC82306 datasheet.

The MSC82306 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overaly die geometry.

This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions.

MSC8205G - Dual N-Channel Enhancement Mode Power MOS FET (MORESEMI)
MSC8205S - Dual N-Channel Enhancement Mode Power MOS FET (MORESEMI)
MSC8251 - Single-Core Digital Signal Processor (NXP)
MSC8256 - Six-Core Digital Signal Processor (Freescale Semiconductor)
MSC8001 - High Power GaAs FET (Advanced Semiconductor)
MSC8004 - HIGH POWER GaAs FET (Advanced Semiconductor)
MSC80064 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS (Advanced Power Technology)
MSC80183 - NPN RF TRANSISTOR (Advanced Semiconductor)
MSC80213 - NPN RF TRANSISTOR (Advanced Semiconductor)
MSC80278 - NPN RF TRANSISTOR (Advanced Semiconductor)

Other Datasheets by STMicroelectronics

MSC82302 - RF & MICROWAVE TRANSISTORS
MSC82304 - RF & MICROWAVE TRANSISTORS
MSC82307 - RF & MICROWAVE TRANSISTORS
MSC82001 - RF & MICROWAVE TRANSISTORS
MSC82003 - RF & MICROWAVE TRANSISTORS
MSC82005 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
MSC82010 - RF & MICROWAVE TRANSISTORS
MSC82040 - RF & MICROWAVE TRANSISTORS

Published: Jul 6, 2007 |