| Part number | MSC82307 |
|---|---|
| Datasheet | MSC82307_STMicroelectronics.pdf |
| File Size | 71.41 KB |
| Manufacturer | STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
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The MSC82307 is a mon base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82307 was designed for Class C amplifier/oscillator applications in the 1.5 - 2.3 GHz frequency range.
See all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| MSC82302 | RF & MICROWAVE TRANSISTORS |
| MSC82304 | RF & MICROWAVE TRANSISTORS |
| MSC82306 | RF & MICROWAVE TRANSISTORS |
| MSC82001 | RF & MICROWAVE TRANSISTORS |
| MSC82003 | RF & MICROWAVE TRANSISTORS |
| MSC82005 | RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| MSC82010 | RF & MICROWAVE TRANSISTORS |
| MSC82040 | RF & MICROWAVE TRANSISTORS |
| MSC82100 | RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
| MSC80185 | RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
