The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry.
This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions.
| Part number | MSC82307 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 71.41 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet |
 MSC82307 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| MSC8205G | Dual N-Channel Enhancement Mode Power MOS FET | MORESEMI |
| MSC8205S | Dual N-Channel Enhancement Mode Power MOS FET | MORESEMI |
| MSC8251 | Single-Core Digital Signal Processor | NXP |
| MSC8256 | Six-Core Digital Signal Processor | Freescale Semiconductor |
| MSC8001 | High Power GaAs FET | Advanced Semiconductor |
| Part Number | Description |
|---|---|
| MSC82302 | RF & MICROWAVE TRANSISTORS |
| MSC82304 | RF & MICROWAVE TRANSISTORS |
| MSC82306 | RF & MICROWAVE TRANSISTORS |
| MSC82001 | RF & MICROWAVE TRANSISTORS |
| MSC82003 | RF & MICROWAVE TRANSISTORS |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
