Full PDF Text Transcription for N2NE10L (Reference)
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N2NE10L. For precise diagrams, and layout, please refer to the original PDF.
STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID 2 STN2NE10L 100V <0.4Ω 1.8A 3 ■ Exceptional dv/dt cap...
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jmax) RDS(on) ID 2 STN2NE10L 100V <0.4Ω 1.8A 3 ■ Exceptional dv/dt capability 2 1 ■ Avalanche rugged technology SOT-223 ■ 100% avalanche tested ) ■ Low threshold drive ct(s Description du This Power MOSFET is the latest development of ro STMicroelectronics unique "Single Feature P Size™" strip-based process. The resulting transistor shows extremely high packing density te for low on-resistance, rugged avalanche le characteristics and less critical alignment steps o therefore a remarkable manufacturing bs reproducibility.
N2NE10L Datasheet
