STMicroelectronics NAND512-B
NAND Flash Memory
FEATURES
SUMMARY● HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications
● NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities
● SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V
● PAGE SIZE – x8 device: (2048 + 64 spare) Bytes – x16 device: (1024 + 32 spare) Words
● BLOCK SIZE – x8 device: (128K + 4K spare) Bytes – x16 device: (64K + 2K spare) Words
● PAGE READ / PROGRAM – Random access: 25µs (max) – Sequential access: 50ns (min) – Page program time: 300µs (typ)
● COPY BACK PROGRAM MODE – Fast page copy without external buffering
● CACHE PROGRAM AND CACHE READ MODES – Internal Cache Register to improv