P11NB40FP Datasheet | STMicroelectronics

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( - ) P to t dv /dt ( 1 ) V ISO Tst g Tj Parameter Dr ai n-sour ce Voltage (V GS =0 ) Drain- gate Volt age (R GS =2 0 k Ω ) G ate-so urc e Vo ltage Dra in Curre nt (co ntinuous) at Tc =2 5 C Dra in Curre nt (co ntinuous) at Tc =1 00 o C6 Drain Curren t (pu lsed) T ota l Dissipation at Tc =2 5 o C Dera ting Factor Peak Dio de Rec overy volt age slop e Insu lation W ithst and Voltage (DC) Stor age Tempe rat ure Max. Operating Junc tion Tempe rature o TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value ST P11NB4 0 STP11NB 40F P 400 40 0 ± 30 10. 7 .7 42. 8 125 1.0 4.5  -65 to 150 150 ( 1)I SD ≤ 10.7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,T j ≤ TJMAX Un it V V V 6.0 3.8 42.8 40 0.32 4.5 20 00 A A A W W /o C V/ns V o o C C 1/9 (- ) Pulse width limited by safe operating area September 1998 http://.. STP11NB40/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 1.0 62 .5 0.5 30 0 TO-220FP 3.12 o o o C/W C/W C/W o C The rmal Res istance Junc tion- ambien t Max Ther mal Resistanc e Case-sink Typ Maximum Lead Tem per ature For Sold ering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS Para met er Avalan che Current , Repet itive or Not-Repet itive (pulse width limited by Tj ma x) Single Pu lse Ava lanche En ergy (startin g Tj =2 5 o C, I D =I AR ,V DD =5 0 V) Max Valu e 10. 7 530 Unit A m...