The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
®
STP11NB40 STP11NB40FP
N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH™ MOSFET
TYPE ST P11NB4 0 ST P11NB4 0FP
s s s s s
V DSS 400 V 400 V
R DS(on) <0 .55 Ω <0 .55 Ω
ID 10 .7 A 6.0 A
TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1 2
3 1 2
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
P11NB40FP Datasheet
