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STMicroelectronics
P11NM50N
P11NM50N is STP11NM50N manufactured by STMicroelectronics.
Features Order codes STD11NM50N STF11NM50N STP11NM50N VDSS @TJmax RDS(on) max 550 V < 0.47 Ω ID 8.5 A - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 1 DPAK 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order codes STD11NM50N STF11NM50N STP11NM50N Marking 11NM50N 11NM50N 11NM50N Package DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube November 2010 Doc ID 17156 Rev 3 1/16 .st. 16 http://.. Contents Contents STD11NM50N, STF11NM50N,...