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P11NM80

Manufacturer: STMicroelectronics

P11NM80 datasheet by STMicroelectronics.

P11NM80 datasheet preview

P11NM80 Datasheet Details

Part number P11NM80
Datasheet P11NM80-STMicroelectronics.pdf
File Size 869.96 KB
Manufacturer STMicroelectronics
Description N-CHANNEL Power MOSFET
P11NM80 page 2 P11NM80 page 3

P11NM80 Overview

The MDmesh™ associates the multiple drain process with the pany’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the pany’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar petition’s products. ratings Symbol Parameter VDS VDGR VGS Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20KΩ) Gate-source voltage...

P11NM80 Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on) -Qg in the industry
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