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P11NM80 - N-CHANNEL Power MOSFET

General Description

The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance.

Key Features

  • Type VDSS RDS(on) RDS(on).
  • Qg STB11NM80 800V < 0.40Ω 14Ω.
  • nC STF11NM80 800V < 0.40Ω 14Ω.
  • nC STP11NM80 800V < 0.40Ω 14Ω.
  • nC STW11NM80 800V < 0.40Ω 14Ω.
  • nC ID 11A 11A 11A 11A.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Best RDS(on).
  • Qg in the industry.

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STB11NM80 - STF11NM80 STP11NM80 - STW11NM80 N-channel 800V - 0.35Ω - 11A - TO-220/FP- D2PAK - TO-247 MDmesh™ Power MOSFET General features Type VDSS RDS(on) RDS(on)*Qg STB11NM80 800V < 0.40Ω 14Ω*nC STF11NM80 800V < 0.40Ω 14Ω*nC STP11NM80 800V < 0.40Ω 14Ω*nC STW11NM80 800V < 0.40Ω 14Ω*nC ID 11A 11A 11A 11A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on) *Qg in the industry Description The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.