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STP150NF04
N-channel 40 V, 0.005 Ω typ., 80 A STripFET™II Power MOSFET in a TO-220 package
Datasheet — production data
Features
Type STP150NF04
VDSS 40 V
RDS(on) max
< 0.007 Ω
■ 100% avalanche tested ■ Standard level gate drive
ID 80 A
Applications
■ Switching applications
TAB
3 2 1
TO-220
Description
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Figure 1. Internal schematic diagram
$ 4!"
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Table 1.
P150NF04 Datasheet
