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P3NA80FI - STP3NA80FI

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Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Datasheet Details

Part number P3NA80FI
Manufacturer STMicroelectronics
File Size 233.42 KB
Description STP3NA80FI
Datasheet download datasheet P3NA80FI Datasheet
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www.DataSheet4U.com STP3NA80 STP3NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA80 STP3NA80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 4.5 Ω < 4.5 Ω ID 3.1 A 2A TYPICAL RDS(on) = 3.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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