P3NA90FI Overview
8 Tc = 125 oC Gate-Source Leakage VGS = ± 30 V Current (VDS = 0) Min. 250 1000 ± 100 Unit V µA µA mA ON (∗) Symb ol V GS(th ) RDS( o n ) ID(o n) P a ram et er Test Conditions Gate T hreshold Voltage VDS = VGS ID = 250 µA St atic Drain-source On VGS = 10 V ID = 1. 5 A Re s is ta nc e VGS = 10 V ID = 1.5 A Tc = 100 oC On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V Min.