P4N150 Datasheet | STMicroelectronics

STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS(on) max ID Pw STFW4N150 1500 V <7Ω 4 A 63 W STP4N150 1500 V <7Ω 4 A 160 W STW4N150 1500 V <7Ω 4 A 160 W - 100% avalanche tested - Intrinsic capacitances and Qg minimized - High speed switching - Fully isolated TO-3PF plastic packages - Creepage distance path is 5.4 mm (typ.) for TO-3PF Application - Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled...