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P4N150 - N-CHANNEL MOSFET

General Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.

Key Features

  • Type VDSS RDS(on) max ID Pw STFW4N150 1500 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS(on) max ID Pw STFW4N150 1500 V <7Ω 4 A 63 W STP4N150 1500 V <7Ω 4 A 160 W STW4N150 1500 V <7Ω 4 A 160 W ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF plastic packages ■ Creepage distance path is 5.4 mm (typ.) for TO-3PF Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.