P4N20 datasheet by STMicroelectronics.
| Part number | P4N20 |
|---|---|
| Datasheet | P4N20-STMicroelectronics.pdf |
| File Size | 265.43 KB |
| Manufacturer | STMicroelectronics |
| Description | N-channel Power MOSFET |
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Unit V 1 µA 10 µA ± 100 nA - O ON (∗) t(s) Symbol c VGS(th) u RDS(on) Prod ID(on) Parameter Test Conditions Gate Threshold Voltage VDS = VGS ID = 250 µA Static Drain-source On VGS = 10V ID = 30 A Resistance On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V Min. 4 1.5 Unit V Ω 4 A lete DYNAMIC so Symbol Obgfs (∗) Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max ID =2 A Min. 3)...
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