P4NB50 Description
t(sUsing the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- cvanced family of power MOSFETs with outstanding uperformances. The new patent pending strip layout rodcoupled with the pany’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, Pexceptional avalanche and dv/dt capabilities and teunrivalled gate charge and switching characteris- tics....