P4NB50 Datasheet | STMicroelectronics

STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5Ω - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) STP4NB50 STP4NB50FP 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A s TYPICAL RDS(on) = 2.5 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES 3 2 1 3 2 1 s GATE CHARGE MINIMIZED )DESCRIPTION t(sUsing the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- cvanced family of power MOSFETs with outstanding uperformances. The new patent pending strip layout rodcoupled with the pany’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, Pexceptional avalanche and dv/dt...