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STP4NB50 STP4NB50FP
N-CHANNEL 500V - 2.5Ω - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STP4NB50 STP4NB50FP
500 V 500 V
< 2.8 Ω < 2.8 Ω
3.8 A 2.5 A
s TYPICAL RDS(on) = 2.5 Ω s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES
3 2 1
3 2 1
s GATE CHARGE MINIMIZED
)DESCRIPTION t(sUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
cvanced family of power MOSFETs with outstanding uperformances. The new patent pending strip layout rodcoupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
Pexceptional avalanche and dv/dt capabilities and teunrivalled gate charge and switching characteris-
tics.
P4NB50 Datasheet
