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P60NE06-16 - STP60NE06-16

General Description

This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process.

Key Features

  • Type VDSS STP60NE06-16 60 V STP60NE06-16FP 60 V RDS(on) < 0.016 Ω < 0.016 Ω ID 60 A 35 A Figure 1. Package.

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Full PDF Text Transcription (Reference)

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STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE™" POWER MOSFET Table 1. General Features Type VDSS STP60NE06-16 60 V STP60NE06-16FP 60 V RDS(on) < 0.016 Ω < 0.016 Ω ID 60 A 35 A Figure 1. Package FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.013 Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ LOW GATE CHARGE 100°C ■ HIGH dv/dt CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.