Datasheet Details
| Part number | P6NA60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 279.61 KB |
| Description | STP6NA60 |
| Datasheet | P6NA60_STMicroelectronics.pdf |
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Overview: .. STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA60 STP6NA60FI s s s s s s s VDSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω ID 6.5 A 3.
| Part number | P6NA60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 279.61 KB |
| Description | STP6NA60 |
| Datasheet | P6NA60_STMicroelectronics.pdf |
|
|
|
This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP6NA60 STP6NA60FI 600 600 ± 30 o Unit V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
P6NA60FI | STP6NA60FI | ST Microelectronics |
| Part Number | Description |
|---|---|
| P6NA60FP | STP6NA60FP |
| P6NB50FP | STP6NB50FP |
| P6NC60FP | STP6NC60FP |
| P6NK50Z | STP6NK50Z |
| P6NK60 | STP6NK60 |
| P6NK60Z | N-CHANNEL MOSFET |
| P6NK60ZFP | STP6NK60ZFP |
| P6NK60ZPF | STP6NK60ZPF |
| P6NK90ZFP | STP6NK90ZFP |